d a t a s h e e t : c 2 d 1 0 1 2 0 r e v . - c2d020 Csilicon carbide schottky diode z ero r ecovery ? r ectifier v rrm = 1200 v i f = 10 a q c = 61 nc features 1200-volt schottky rectifer zero reverse recovery zero forward recovery high-frequency operation temperature-independent switching behavior extremely fast swtitching positive temperature coeffcient on v f benefts replace bipolar with unipolar rectifers essentially no switching losses higher effciency reduction of heat sink requirements parallel devices without thermal runaway applications switch mode power supplies power factor correction motor drives ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? package to-220-2 maximum ratings symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 1200 v v rsm surge peak reverse voltage 1200 v v dc dc blocking voltage 1200 v i f(avg) average forward current 10 22 a t c =160?c t c =125?c i f(peak) peak forward current 25 a t c =125?c, t rep <1 ms, duty=0.5 i frm repetitive peak forward surge current 50 a t c =25?c, t p =8.3 ms, half sine wave i fsm non-repetitive peak forward surge current 250 a t c =25?c, t p =10 s, pulse p tot power dissipation 312 104 w t c =25?c t c =125?c t j , t stg operating junction and storage temperature -55 to +175 ?c pin 1 pin 2 case part number package marking C2D10120a to-220-2 C2D10120 subject to change without notice. www.cree.com/power
2 C2D10120 rev. - electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.6 2.5 1.8 3.0 v i f = 10 a t j =25c i f = 10 a t j =175c i r reverse current 10 20 200 1000 a v r = 1200 v t j =25c v r = 1200 v t j =150c q c total capacitive charge 61 nc v r = 1200 v, i f = 10 a d i /d t = 500 a/s t j = 25c c total capacitance 1000 80 59 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz note: this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. max. unit test conditions note r jc thermal resistance from junction to case 0.48 c/w typical performance 1. figure 1. forward characteristics 0 2 4 6 8 10 12 14 16 18 20 0.0 1.0 2.0 3.0 4.0 5.0 v f forward voltage (v) i f forward current (a) tj = 25?c tj = 75?c tj = 125?c tj = 175?c figure 2. reverse characteristics 0 20 40 60 80 100 120 140 160 180 200 0 500 1000 1500 2000 v r reverse voltage (v) i r reverse current ( a) t j = 25?c t j = 75?c t j = 125?c t j = 175?c
C2D10120 rev. - figure 3. current derating 0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175 200 t c case temperture (c) i f(av) forward current (a) figure 4. capacitance vs. reverse voltage 0 100 200 300 400 500 600 700 800 1 10 100 1000 v r reverse voltage (v) capacitance (pf) figure 5. transient thermal impedance 1.00e-03 1.00e-02 1.00e-01 1.00e+00 1.00e-07 1.00e-06 1.00e-05 1.00e-04 1.00e-03 1.00e-02 1.00e-01 1.00e+00 time [s] zth [c/w] typical performance i f(avg) forward current (a)
C2D10120 rev. - package dimensions package to-220-2 a c e d g h b j l m n f p q s t u v w x y m i n m a x m i n m a x a . 3 9 5 . 4 1 0 1 0 . 0 3 3 1 0 . 4 1 4 b . 2 3 5 . 2 5 5 5 . 9 6 9 6 . 4 7 7 c . 1 0 2 . 1 1 2 2 . 5 9 1 2 . 8 4 5 d . 3 3 7 . 3 3 7 8 . 5 6 0 8 . 5 6 0 e . 5 9 0 . 6 1 0 1 4 . 9 8 6 1 5 . 4 9 4 f . 1 4 9 . 1 5 3 3 . 7 8 5 3 . 8 8 6 g 1 . 1 2 7 1 . 1 4 7 2 8 . 6 2 6 2 9 . 1 3 4 h . 5 3 0 . 5 5 0 1 3 . 4 6 2 1 3 . 9 7 0 j l . 0 2 8 . 0 3 6 . 7 1 1 . 9 1 4 m . 0 4 5 . 0 5 5 1 . 1 4 3 1 . 3 9 7 n . 1 9 5 . 2 0 5 4 . 9 5 3 5 . 2 0 7 p . 1 7 0 . 1 8 0 4 . 3 1 8 4 . 5 7 2 q . 0 4 8 . 0 5 4 1 . 2 1 9 1 . 3 7 1 s 3 5 3 5 t 3 5 3 5 u 3 5 3 5 v . 1 0 0 . 1 1 0 2 . 5 4 2 . 7 9 4 w . 0 1 4 . 0 2 1 . 3 5 6 . 5 3 3 x 3 5 3 5 y . 3 9 5 . 4 1 0 1 0 . 0 3 3 1 0 . 4 1 4 z . 1 3 0 . 1 5 0 3 . 3 0 2 3 . 8 1 0 i n c h e s m i l l i m e t e r s p o s r 0 . 0 1 0 r 0 . 2 5 4 1 2 z pos inches millimeters min max min max a .381 .410 9.677 10.414 b .235 .255 5.969 6.477 c .100 .120 2.540 3.048 d .223 .337 5.664 8.560 e .590 .615 14.986 15.621 f .143 .153 3.632 3.886 g 1.105 1.147 28.067 29.134 h .500 .550 12.700 13.970 j r 0.197 r 0.197 l .025 .036 .635 .914 m .045 .055 1.143 1.397 n .195 .205 4.953 5.207 p .165 .185 4.191 4.699 q .048 .054 1.219 1.372 s 3 6 3 6 t 3 6 3 6 u 3 6 3 6 v .094 .110 2.388 2.794 w .014 .025 .356 .635 x 3 5.5 3 5.5 y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 note: dimension l, m, w apply for solder dip finish 1.
C2D10120 rev. - this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power recommended solder pad layout to-220-2 part number package marking C2D10120a to-220-2 C2D10120
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